CSD18542KCS

This 60-V N-channel NexFET power MOSFET is supplied in a 3-pin TO-220 plastic package for low-loss power conversion applications. It provides 3.3 mΩ typical drain-to-source on-resistance at 10 V gate drive and 4.0 mΩ typical at 4.5 V, with 44 nC typical total gate charge at 10 V. The device is logic-level and avalanche rated, with package-limited continuous drain current up to 200 A and power dissipation up to 200 W. Its operating junction temperature range is -55°C to 175°C, and typical junction-to-case thermal resistance is 0.6°C/W.