N-channel NexFET™ power MOSFET featuring 80-V drain-source voltage and 4.1 mOhm drain-source on-resistance. Single element, 5-terminal device with dual terminal position, housed in a 5 mm x 6 mm SON package. Operates across a temperature range of -55 to 150°C.
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Technical Specifications
Texas Instruments CSD19502Q5BT technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Texas Instruments CSD19502Q5BT Datasheet
Download the complete datasheet for Texas Instruments CSD19502Q5BT to view detailed technical specifications.
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