N-channel NexFET™ power MOSFET featuring 80-V drain-source voltage and 4.1 mOhm drain-source on-resistance. Single element, 5-terminal device with dual terminal position, housed in a 5 mm x 6 mm SON package. Operates across a temperature range of -55 to 150°C.
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Technical Specifications
Texas Instruments CSD19502Q5BT technical specifications.
General
Number of Terminals
5
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Texas Instruments CSD19502Q5BT Datasheet
Download the complete datasheet for Texas Instruments CSD19502Q5BT to view detailed technical specifications.
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