Single N-channel NexFET™ power MOSFET featuring 100-V drain-source voltage and a low 6.4 mOhm on-resistance. This device operates across a wide temperature range from -55°C to 150°C. It is housed in a compact 5 mm x 6 mm SON package with 5 terminals, offering dual terminal positioning for flexible integration. The MOSFET contains a single element, optimized for high-performance power applications.
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Technical Specifications
Texas Instruments CSD19531Q5A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Texas Instruments CSD19531Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD19531Q5A to view detailed technical specifications.
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