N-channel NexFET™ MOSFET, featuring a 100V drain-source voltage and a low 4.9mOhm on-resistance. This single-element device is housed in a SON5x6 package with a CLIP terminal, offering 5 terminals in a dual position configuration. Operating across a temperature range of -55°C to 150°C, it provides efficient power switching capabilities.
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Technical Specifications
Texas Instruments CSD19532Q5BT technical specifications.
General
Number of Terminals
5
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Texas Instruments CSD19532Q5BT Datasheet
Download the complete datasheet for Texas Instruments CSD19532Q5BT to view detailed technical specifications.
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