N-channel NexFET™ power MOSFET featuring a low on-resistance of 2.4 mΩ. This single MOSFET is housed in a TO-263AB (D2PAK) package, offering 100-V drain-source voltage capability. Designed for efficient power switching, it operates across a wide temperature range from -55°C to 175°C.
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Technical Specifications
Texas Instruments CSD19536KTTT technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Texas Instruments CSD19536KTTT Datasheet
Download the complete datasheet for Texas Instruments CSD19536KTTT to view detailed technical specifications.
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