P-channel NexFET™ power MOSFET, single element configuration, featuring a -20V drain-to-source breakdown voltage and 33mΩ maximum drain-to-source resistance at 10V gate-source voltage. This surface-mount device offers a continuous drain current of 3.2A and a maximum power dissipation of 1W. Operating across a temperature range of -55°C to 150°C, it includes gate ESD protection and is packaged in a 1mm x 1.5mm WLP with copper, tin, and silver contact plating.
Sign in to ask questions about the Texas Instruments CSD25211W1015 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Texas Instruments CSD25211W1015 technical specifications.
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 14.2ns |
| Gate to Source Voltage (Vgs) | -6V |
| Input Capacitance | 570pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 36.9ns |
| Turn-On Delay Time | 13.6ns |
| RoHS | Compliant |
Download the complete datasheet for Texas Instruments CSD25211W1015 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
