P-channel NexFET™ power MOSFET, single element configuration, featuring a -20V drain-to-source breakdown voltage and 33mΩ maximum drain-to-source resistance at 10V gate-source voltage. This surface-mount device offers a continuous drain current of 3.2A and a maximum power dissipation of 1W. Operating across a temperature range of -55°C to 150°C, it includes gate ESD protection and is packaged in a 1mm x 1.5mm WLP with copper, tin, and silver contact plating.
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Texas Instruments CSD25211W1015 technical specifications.
General
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 14.2ns |
| Gate to Source Voltage (Vgs) | -6V |
| Input Capacitance | 570pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 36.9ns |
| Turn-On Delay Time | 13.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD25211W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD25211W1015 to view detailed technical specifications.
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