P-channel NexFET™ power MOSFET, single element configuration, featuring a -20V drain-to-source breakdown voltage and 33mΩ maximum drain-to-source resistance at 10V gate-source voltage. This surface-mount device offers a continuous drain current of 3.2A and a maximum power dissipation of 1W. Operating across a temperature range of -55°C to 150°C, it includes gate ESD protection and is packaged in a 1mm x 1.5mm WLP with copper, tin, and silver contact plating.
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Texas Instruments CSD25211W1015 technical specifications.
General
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
3.2A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
14.2ns
Gate to Source Voltage (Vgs)
-6V
Input Capacitance
570pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Rds On Max
33mR
RoHS Compliant
Yes
Series
NexFET™
Turn-Off Delay Time
36.9ns
Turn-On Delay Time
13.6ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD25211W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD25211W1015 to view detailed technical specifications.
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