P-channel power MOSFET featuring 11.7mΩ Rds On and 20V Drain-Source Voltage. This NexFET™ device offers a continuous drain current of 14A and operates within a -55°C to 150°C temperature range. Surface-mount SON package with 8.1ns turn-on delay and 12.6ns fall time. Maximum power dissipation is 2.8W.
PackageSON
MountingSurface Mount
PolarityP-CHANNEL
Power2.8W
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Technical Specifications
Texas Instruments CSD25401Q3 technical specifications.
General
Package/Case
SON
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
11.7mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
12.6ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
1.4nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
850mV
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
11.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
850mV
Turn-Off Delay Time
13.5ns
Turn-On Delay Time
8.1ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD25401Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD25401Q3 to view detailed technical specifications.
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