P-channel power MOSFET featuring 11.7mΩ Rds On and 20V Drain-Source Voltage. This NexFET™ device offers a continuous drain current of 14A and operates within a -55°C to 150°C temperature range. Surface-mount SON package with 8.1ns turn-on delay and 12.6ns fall time. Maximum power dissipation is 2.8W.
Sign in to ask questions about the Texas Instruments CSD25401Q3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Texas Instruments CSD25401Q3 technical specifications.
| Package/Case | SON |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 11.7mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 12.6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 11.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 8.1ns |
| RoHS | Compliant |
Download the complete datasheet for Texas Instruments CSD25401Q3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
