P-channel power MOSFET featuring 11.7mΩ Rds On and 20V Drain-Source Voltage. This NexFET™ device offers a continuous drain current of 14A and operates within a -55°C to 150°C temperature range. Surface-mount SON package with 8.1ns turn-on delay and 12.6ns fall time. Maximum power dissipation is 2.8W.
PackageSON
MountingSurface Mount
PolarityP-CHANNEL
Power2.8W
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Technical Specifications
Texas Instruments CSD25401Q3 technical specifications.
General
| Package/Case | SON |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 11.7mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 12.6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 11.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 8.1ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD25401Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD25401Q3 to view detailed technical specifications.
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