P-channel Power MOSFET featuring NexFET process technology. This dual MOSFET offers a maximum continuous drain current of 3A and a maximum gate source voltage of -6V. Housed in a compact 1.8mm x 1.8mm DSBGA package with a 0.5mm pin pitch, it is designed for surface mount applications. Key electrical characteristics include a typical gate charge of 2.8 nC and typical input capacitance of 315 pF. Operating temperature range spans from -55°C to 150°C.
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Texas Instruments CSD75204W15 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | DSBGA |
| Package Description | Die Size Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 9 |
| PCB | 9 |
| Package Length (mm) | 1.8 |
| Package Width (mm) | 1.8 |
| Package Height (mm) | 0.35 |
| Seated Plane Height (mm) | 0.63(Max) |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Process Technology | NexFET |
| Maximum Gate Source Voltage | -6V |
| Maximum Continuous Drain Current | 3A |
| Typical Gate Charge @ Vgs | 2.8nC |
| Typical Input Capacitance @ Vds | 315pF |
| Maximum Power Dissipation | 700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 01295 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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