P-channel Power MOSFET featuring NexFET process technology. This dual MOSFET offers a maximum continuous drain current of 3A and a maximum gate source voltage of -6V. Housed in a compact 1.8mm x 1.8mm DSBGA package with a 0.5mm pin pitch, it is designed for surface mount applications. Key electrical characteristics include a typical gate charge of 2.8 nC and typical input capacitance of 315 pF. Operating temperature range spans from -55°C to 150°C.
PackageDSBGA
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD75204W15 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
DSBGA
Package Description
Die Size Ball Grid Array
Lead Shape
Ball
Pin Count
9
PCB
9
Package Length (mm)
1.8
Package Width (mm)
1.8
Package Height (mm)
0.35
Seated Plane Height (mm)
0.63(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Process Technology
NexFET
Maximum Gate Source Voltage
-6V
Maximum Continuous Drain Current
3A
Typical Gate Charge @ Vgs
2.8nC
Typical Input Capacitance @ Vds
315pF
Maximum Power Dissipation
700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Texas Instruments CSD75204W15 Datasheet
Download the complete datasheet for Texas Instruments CSD75204W15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.