High-frequency synchronous power module featuring two N-channel FETs in a BGA package. Delivers 4.5A continuous drain current with a 25V drain-to-source breakdown voltage and 29mΩ drain-to-source resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. Surface mountable with a 375µm thickness and 625µm height, this RoHS compliant component offers fast switching characteristics including a 2.9ns fall time.
PackageBGA
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Texas Instruments CSD86311W1723 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
25V
Fall Time
2.9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
10V
Height
625um
Input Capacitance
585pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Rds On Max
39mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
375um
Threshold Voltage
1V
Turn-Off Delay Time
13.2ns
Turn-On Delay Time
5.4ns
Width
0m
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD86311W1723 Datasheet
Download the complete datasheet for Texas Instruments CSD86311W1723 to view detailed technical specifications.
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