High-frequency synchronous power module featuring two N-channel FETs in a BGA package. Delivers 4.5A continuous drain current with a 25V drain-to-source breakdown voltage and 29mΩ drain-to-source resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. Surface mountable with a 375µm thickness and 625µm height, this RoHS compliant component offers fast switching characteristics including a 2.9ns fall time.
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Texas Instruments CSD86311W1723 technical specifications.
| Package/Case | BGA |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 2.9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 625um |
| Input Capacitance | 585pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 39mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Thickness | 375um |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 13.2ns |
| Turn-On Delay Time | 5.4ns |
| Width | 0m |
| RoHS | Compliant |
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