PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Texas Instruments CSD87312Q3E technical specifications.
General
Package/Case
VSON
Contact Plating
Gold
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
31mR
Drain to Source Voltage (Vdss)
30V
Fall Time
2.8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
10V
Input Capacitance
1.25nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
33mR
RoHS Compliant
Yes
Series
NexFET™
Turn-Off Delay Time
17ns
Turn-On Delay Time
7.8ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD87312Q3E Datasheet
Download the complete datasheet for Texas Instruments CSD87312Q3E to view detailed technical specifications.
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