The CSD87312Q3E is a 2 N-Channel power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a drain to source breakdown voltage of 30V. The device is packaged in a VSON package and is lead-free. It is RoHS compliant and features a gate to source voltage of 10V and an input capacitance of 1.25nF. The MOSFET has a continuous drain current of 27A and a drain to source resistance of 31mR.
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Texas Instruments CSD87312Q3E technical specifications.
| Package/Case | VSON |
| Contact Plating | Gold |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.25nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 7.8ns |
| RoHS | Compliant |
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