30V, N-Channel synchronous buck NexFET™ MOSFET featuring 32A continuous drain current and 7.6mΩ Rds On. This power management IC offers a 2.1ns fall time and 1.255nF input capacitance, operating within a -55°C to 150°C temperature range. Encased in a SON package with tin, matte contact plating, it supports surface mount assembly and provides 12W maximum power dissipation.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power12W
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Technical Specifications
Texas Instruments CSD87351Q5D technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.255nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12W |
| Mount | Surface Mount |
| Nominal Vgs | 2.1V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 12W |
| Radiation Hardening | No |
| Rds On Max | 7.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD87351Q5D Datasheet
Download the complete datasheet for Texas Instruments CSD87351Q5D to view detailed technical specifications.
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