High-performance N-channel synchronous buck NexFET™ MOSFET, featuring a 30V drain-to-source breakdown voltage and 25A continuous drain current. This surface mount device, packaged in SON, offers a fast 2.7ns fall time and 1.8nF input capacitance, operating across a wide temperature range of -55°C to 150°C. With 8.5W maximum power dissipation and RoHS compliance, it is ideal for demanding power management applications.
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Texas Instruments CSD87352Q5D technical specifications.
| Package/Case | SON |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.8nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| RoHS | Compliant |
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