NPN Bipolar Junction Transistor (BJT) for high current/voltage applications. Features a 50V Collector Emitter Breakdown Voltage and 55V Collector Emitter Voltage (VCEO). Offers a 350mA output current with a maximum collector current of 500mA. Operates within a temperature range of -40°C to 125°C. Packaged in a 16-SOIC surface mount case.
PackageSOIC
Current Rating350mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Texas Instruments DS2003TM/NOPB technical specifications.
General
Package/Case
SOIC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage (VCEO)
55V
Current Rating
350mA
Emitter Base Voltage (VEBO)
6V
Height
1.45mm
Lead Free
Lead Free
Length
9.91mm
Max Collector Current
500mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
350mA
Max Output Voltage
50V
Max Supply Voltage
5V
Mount
Surface Mount
Number of Circuits
1
Number of Elements
7
Output Current
350mA
Packaging
Rail/Tube
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
3.91mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments DS2003TM/NOPB Datasheet
Download the complete datasheet for Texas Instruments DS2003TM/NOPB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
