NPN Bipolar Junction Transistor (BJT) for high current/voltage applications. Features a 50V Collector Emitter Breakdown Voltage and 55V Collector Emitter Voltage (VCEO). Offers a 350mA output current with a maximum collector current of 500mA. Operates within a temperature range of -40°C to 125°C. Packaged in a 16-SOIC surface mount case.
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Texas Instruments DS2003TM/NOPB technical specifications.
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 55V |
| Current Rating | 350mA |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.45mm |
| Lead Free | Lead Free |
| Length | 9.91mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 350mA |
| Max Output Voltage | 50V |
| Max Supply Voltage | 5V |
| Mount | Surface Mount |
| Number of Circuits | 1 |
| Number of Elements | 7 |
| Output Current | 350mA |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 3.91mm |
| RoHS | Compliant |
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