Dual bidirectional transient voltage suppressor diode offering ±3.6V reverse standoff voltage and 20W peak pulse power dissipation. Features 0.2pF capacitance, 5V minimum breakdown voltage, and a maximum clamping voltage of 13.5V. Designed for ESD protection, operating across a temperature range of -40°C to 125°C with 3 terminals and silicon diode elements.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Texas Instruments ESD122DMYR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Texas Instruments ESD122DMYR technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.6 |
| Breakdown Voltage-Min | 5 |
| Non-rep Peak Rev Power Dis-Max | 20 |
| Clamping Voltage-Max | 13.5 |
| Breakdown Voltage-Max | 7.9 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Texas Instruments ESD122DMYR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
