This high-voltage gate driver drives independent high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge topologies. It operates from a 9 V to 14 V supply, supports up to 100 V bootstrap supply voltage, and provides 3 A peak output current with a typical 25 ns propagation delay. CMOS logic inputs, 8 V typical undervoltage lockout, and 0.01 mA quiescent current support efficient control. The device is rated for operation from -40°C to 125°C and is offered across 8-pin SOIC and HSOIC packages and a 10-pin WSON package.
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| Bootstrap supply voltage (max) | 100V |
| Power switch | MOSFET |
| Input supply voltage (min) | 9V |
| Input supply voltage (max) | 14V |
| Peak output current | 3A |
| Operating temperature range | -40 to 125°C |
| Undervoltage lockout (typ) | 8V |
| Rating | Catalog |
| Propagation delay time | 0.025µs |
| Rise time | 10ns |
| Fall time | 10ns |
| Quiescent current | 0.01mA |
| Input threshold | CMOS |
| Channel input logic | CMOS |
| Switch node voltage | -1V |
| Driver configuration | Dual, Independent |
| RoHS | Yes |
| REACH | Yes |
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