This device is a high-voltage gate driver for both the high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge power stages. The LM5100B version provides 2 A peak output drive with CMOS input thresholds and a floating high-side driver that operates with supply voltages up to 100 V. It includes an integrated high-voltage bootstrap diode, supply rail undervoltage lockout, and low-power level shifting for clean logic translation to the high-side driver. Typical timing performance includes 25 ns propagation time, 8 ns rise and fall times with a 1000 pF load, and 3 ns propagation delay matching. Qualified orderable devices are specified for a -40°C to 125°C operating temperature range.
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| Driver configuration | High-side and low-side gate driver |
| Input threshold type | CMOS |
| Peak output current | 2A |
| Floating high-side operating voltage | 100V |
| Bootstrap supply voltage | 118 maxV DC |
| Propagation time | 25 typns |
| Rise time at 1000 pF load | 8 typns |
| Fall time at 1000 pF load | 8 typns |
| Propagation delay matching | 3 typns |
| Undervoltage lockout | 8V |
| Operating temperature range | -40 to 125°C |
| Available package options | SOIC-8, WSON-10 |
| RoHS | Yes |
| REACH | Yes |
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