This high-voltage half-bridge gate driver is designed to drive both the high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge power stages. It supports floating high-side operation up to 100 V, provides 3 A peak output current, and uses TTL-compatible logic inputs with 8 V undervoltage lockout. TI specifies 25 ns typical propagation delay, 10 ns typical rise and fall times, and about 3 ns typical propagation delay matching. Available orderable options span SOIC, HSOIC PowerPAD, WSON-8, and WSON-10 package variants, with an operating range from -40°C to 125°C.
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| Driver type | Half-bridge gate driver |
| High-side operating voltage | 100V |
| Bootstrap supply voltage | 118V DC |
| Input supply voltage max | 14V |
| Peak output current | 3A |
| Undervoltage lockout threshold typ | 8V |
| Propagation delay time typ | 0.025µs |
| Rise time typ | 10ns |
| Fall time typ | 10ns |
| Propagation delay matching typ | 3ns |
| Quiescent current | 0.01mA |
| Input threshold type | TTL |
| Operating temperature range | -40 to 125°C |
| Load for rise/fall time spec | 1000pF |
| Logic inputs | Independent high-side and low-side driver inputs |
| RoHS | Yes |
| REACH | Yes |
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