This device is a dual, independent half-bridge gate driver for high-side and low-side N-channel MOSFETs. It operates from a 9 V to 14 V supply, supports bootstrap supply voltage up to 100 V, and provides 2 A peak output current. Typical undervoltage lockout is 8 V, typical propagation delay is 25 ns, and typical rise and fall times are 10 ns. It supports TTL input logic and is specified for operation from -40°C to 125°C.
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| Peak output current | 2A |
| Operating temperature range | -40 to 125°C |
| Undervoltage lockout | 8 typV |
| Propagation delay time | 0.025µs |
| Rise time | 10ns |
| Fall time | 10ns |
| Quiescent current | 0.01mA |
| Input threshold | TTL |
| Channel input logic | TTL |
| Switch node voltage | -1V |
| Driver configuration | Dual, Independent |
| Bootstrap supply voltage max | 100V |
| Power switch type | MOSFET |
| Input supply voltage min | 9V |
| Input supply voltage max | 14V |
| RoHS | Yes |
| REACH | Yes |
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