This device is a dual independent high-side and low-side gate driver for MOSFET half-bridge applications. It operates from a 9 V to 14 V supply and supports up to 100 V bootstrap supply voltage. The driver provides 1 A peak output current with typical 25 ns propagation delay and 10 ns typical rise and fall times. TTL-compatible inputs and typical 8 V undervoltage lockout are provided, and the operating temperature range is -40°C to 125°C. TI offers the family in HVSSOP-8, SOIC-8, and WSON-10 package options.
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| Bootstrap supply voltage (max) | 100V |
| Power switch | MOSFET |
| Input supply voltage (min) | 9V |
| Input supply voltage (max) | 14V |
| Peak output current | 1A |
| Operating temperature range | -40 to 125°C |
| Undervoltage lockout (typ) | 8V |
| Propagation delay time | 0.025µs |
| Rise time | 10ns |
| Fall time | 10ns |
| Iq | 0.01mA |
| Input threshold | TTL |
| Channel input logic | TTL |
| Switch node voltage | -1V |
| Driver configuration | Dual, Independent |
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