This half-bridge gate driver is designed to drive both the high-side and low-side N-channel MOSFETs in synchronous buck and half-bridge power stages. It supports high-side rail voltages up to 90 V, uses TTL- and CMOS-compatible control inputs, and provides undervoltage lockout on both the low-side and high-side supply rails. Typical propagation delay is 30 ns with 2 ns delay matching, and the outputs can drive a 1000 pF load with 15 ns rise and fall times. The device operates from an 8 V to 14 V gate-drive supply and is specified for junction temperatures from -40°C to 125°C.
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| Driver type | Half-bridge gate driver |
| Peak source current | 1A |
| Peak sink current | 1A |
| High-side rail voltage | 90 maxV |
| Bootstrap supply voltage | 108 max absoluteV |
| Gate-drive supply voltage | 8 to 14V |
| Operating junction temperature | -40 to 125°C |
| Input low threshold | 0.8 maxV |
| Input high threshold | 2.2 minV |
| Turn-off propagation delay | 30 typns |
| Turn-on propagation delay | 32 typns |
| Propagation delay matching | 2 typns |
| Rise and fall time | 15 typ at 1000 pFns |
| Minimum input pulse width | 50ns |
| HS slew rate | 50V/ns |
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