Automotive-grade half-bridge gate driver for GaNFETs, featuring a 1.2-A/5-A output current capability and a 100-V breakdown voltage. Operates across a wide temperature range of -40°C to 125°C, with a nominal supply voltage of 5V (4.5V to 5.5V). This 10-terminal device utilizes a DUAL terminal position and is housed in a compact 4mm x 4mm S-PDSO-N10 package. AEC-Q100 qualified for automotive applications.
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Technical Specifications
Texas Instruments LM5113QDPRRQ1 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 10 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | S-PDSO-N10 |
| Width | 4 |
| Length | 4 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 5 |
| Supply Voltage-Min | 4.5 |
| Supply Voltage-Max | 5.5 |
| Screening Level | AEC-Q100 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Texas Instruments LM5113QDPRRQ1 Datasheet
Download the complete datasheet for Texas Instruments LM5113QDPRRQ1 to view detailed technical specifications.
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