Automotive-grade half-bridge gate driver for GaNFETs, featuring a 1.2-A/5-A output current capability and a 100-V breakdown voltage. Operates across a wide temperature range of -40°C to 125°C, with a nominal supply voltage of 5V (4.5V to 5.5V). This 10-terminal device utilizes a DUAL terminal position and is housed in a compact 4mm x 4mm S-PDSO-N10 package. AEC-Q100 qualified for automotive applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Texas Instruments LM5113QDPRRQ1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Texas Instruments LM5113QDPRRQ1 technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 10 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | S-PDSO-N10 |
| Width | 4 |
| Length | 4 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 5 |
| Supply Voltage-Min | 4.5 |
| Supply Voltage-Max | 5.5 |
| Screening Level | AEC-Q100 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Texas Instruments LM5113QDPRRQ1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
