
Dual-channel, half-bridge gate driver for GaNFETs, featuring 5A peak output current and 1.2A continuous output. Operates from a 4.5V to 5.5V supply voltage with a typical 5V operating voltage. Offers fast switching characteristics with a 2ns turn-on delay, 2ns turn-off delay, and 4ns fall time. Designed for surface mount applications with a 10-WSON package, measuring 4mm x 4mm x 0.8mm. Suitable for operation across a wide temperature range of -40°C to 125°C. RoHS compliant.
Texas Instruments LM5113SDE/NOPB technical specifications.
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