
Dual-channel, half-bridge gate driver for GaNFETs, featuring 5A peak output current and 1.2A continuous output. Operates from a 4.5V to 5.5V supply voltage with a typical 5V operating voltage. Offers fast switching characteristics with a 2ns turn-on delay, 2ns turn-off delay, and 4ns fall time. Designed for surface mount applications with a 10-WSON package, measuring 4mm x 4mm x 0.8mm. Suitable for operation across a wide temperature range of -40°C to 125°C. RoHS compliant.
Texas Instruments LM5113SDE/NOPB technical specifications.
| Fall Time | 4ns |
| Height | 0.8mm |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 5A |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Operating Supply Current | 100uA |
| Operating Supply Voltage | 5V |
| Output Current | 5A |
| Packaging | Tape and Reel |
| Propagation Delay | 30ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | LM5113 |
| Turn-Off Delay Time | 2ns |
| Turn-On Delay Time | 2ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Texas Instruments LM5113SDE/NOPB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
