Dual, Low-Voltage, Low Power, RRO 8-SOIC -40 to 125
Sign in to ask questions about the Texas Instruments LPV358IDRE4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Texas Instruments LPV358IDRE4 technical specifications.
| Amplifier Type | GENERAL PURPOSE |
| Bandwidth | 237kHz |
| Package/Case | SOIC |
| Gain Bandwidth Product | 237kHz |
| Input Bias Current | 2nA |
| Input Offset Voltage (Vos) | 1.5mV |
| Lead Free | Contains Lead |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Circuits | 2 |
| Operating Supply Current | 15uA |
| Operating Supply Voltage | 5V |
| Output Current per Channel | 72mA |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Slew Rate | 0.1V/µs |
| Supply Current | 20mA |
| Technology | BICMOS |
| Voltage Gain | 100dB |
| RoHS | Compliant |
Download the complete datasheet for Texas Instruments LPV358IDRE4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
