Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC
Texas Instruments TPS1120DG4 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.17A |
| Drain to Source Breakdown Voltage | 15V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 15V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | -15V |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 840mW |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 840mW |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 4.5ns |
| RoHS | Compliant |
No datasheet is available for this part.
