UCC23313DWYR

This single-channel isolated gate driver is intended for IGBTs, MOSFETs, and SiC MOSFETs and uses an opto-compatible emulated-diode input stage. It provides 4.5-A source and 5.3-A sink peak output current, supports up to 33 V output supply voltage, and offers 3.75-kVRMS basic isolation. The device specifies up to 105 ns propagation delay, 25 ns maximum part-to-part delay matching, 35 ns maximum pulse-width distortion, and at least 150 kV/µs common-mode transient immunity. It is offered in a stretched SO-6 package with more than 8.5 mm creepage and clearance, CTI greater than 600 V, and an operating junction temperature range of -40°C to 150°C.