Half-bridge gate driver for driving two N-channel MOSFETs in high-side and low-side configurations. The device supports a maximum bootstrap voltage of 120 V, 3 A sink and 3 A source output currents, and 8 V undervoltage lockout for both drivers. It includes an on-chip bootstrap diode with 0.65 V forward voltage and 0.65 Ω dynamic resistance, handles negative HS voltages down to -18 V, and delivers 22 ns propagation delay with 8 ns rise and 7 ns fall times at 1000 pF load. Operating supply range is 8 V to 17 V and the device is specified from -40°C to 150°C.
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| Driver configuration | Half-bridge |
| Channel count | 2 |
| Input supply voltage (min) | 8V |
| Input supply voltage (max) | 17V |
| Bootstrap voltage (max) | 120V |
| Peak sink current | 3A |
| Peak source current | 3A |
| Undervoltage lockout (typ) | 8V |
| Propagation delay time | 0.02µs |
| Rise time | 8ns |
| Fall time | 7ns |
| Delay matching | 1ns |
| HS negative voltage handling | -18V |
| Bootstrap diode forward voltage | 0.65V |
| Bootstrap diode dynamic resistance | 0.65Ω |
| Operating temperature range | -40 to 150°C |
| Iq | 0.001mA |
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