This half-bridge gate driver is designed to drive two N-channel MOSFETs in high-side and low-side configurations. It supports a bootstrap supply voltage up to 120 V, operates from an 8 V to 17 V input supply, and provides 3 A peak output current. The device includes an integrated bootstrap diode, accepts TTL inputs, and uses a noninverting driver configuration. It handles switch-node voltages down to -18 V and includes an 8 V typical undervoltage lockout. Typical switching performance is 0.02 µs propagation delay, 8 ns rise time, and 7 ns fall time, with operation from -40 °C to 150 °C.
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| Bootstrap supply voltage (max) | 120V |
| Power switch | MOSFET |
| Input supply voltage (min) | 8V |
| Input supply voltage (max) | 17V |
| Peak output current | 3A |
| Operating temperature range | -40 to 150°C |
| Undervoltage lockout (typ) | 8V |
| Propagation delay time | 0.02µs |
| Rise time | 8ns |
| Fall time | 7ns |
| Quiescent current | 0.001mA |
| Input threshold | TTL |
| Channel input logic | TTL |
| Switch node voltage | -18V |
| Driver configuration | Noninverting |
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