This high-frequency half-bridge gate driver controls N-channel MOSFETs in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. It integrates a 120-V bootstrap diode and provides independently controlled high-side and low-side outputs. The device operates from an 8-V to 17-V input supply, delivers 3-A peak output current, and uses TTL-compatible input thresholds. Undervoltage lockout is provided on both the high-side and low-side drivers, and the specified operating temperature range extends from -40°C to 150°C.
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| Bootstrap supply voltage (max) | 120V |
| Power switch | MOSFET |
| Input supply voltage (min) | 8V |
| Input supply voltage (max) | 17V |
| Peak output current | 3A |
| Operating temperature range | -40 to 150°C |
| Undervoltage lockout (typ) | 8V |
| Rating | Catalog |
| Propagation delay time | 0.02µs |
| Rise time | 8ns |
| Fall time | 7ns |
| Iq | 0.001mA |
| Input threshold | TTL |
| Channel input logic | TTL |
| Switch node voltage | -18V |
| Features | Integrated bootstrap diode, Negative Voltage Handling on Input |
| Driver configuration | Noninverting |
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