This half-bridge gate driver is designed for MOSFET power stages and supports up to 120 V bootstrap supply voltage. It operates from an 8 V to 17 V input supply and provides 4.5 A peak output current. The device uses TTL-compatible dual noninverting inputs, integrates a bootstrap diode, and supports negative voltage handling on the input. Typical undervoltage lockout is 8 V, typical propagation delay is 0.02 µs, and typical rise and fall times are 7.2 ns and 5.5 ns. It is rated for operation from -40°C to 150°C.
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| Bootstrap supply voltage (max) | 120V |
| Power switch | MOSFET |
| Input supply voltage (min) | 8V |
| Input supply voltage (max) | 17V |
| Peak output current | 4.5A |
| Operating temperature range | -40 to 150°C |
| Undervoltage lockout (typ) | 8V |
| Propagation delay time | 0.02µs |
| Rise time | 7.2ns |
| Fall time | 5.5ns |
| Iq | 0.001mA |
| Input threshold | TTL |
| Channel input logic | TTL |
| Switch node voltage | -20V |
| Features | Integrated bootstrap diode, Negative Voltage Handling on Input |
| Driver configuration | Dual, Noninverting, TTL compatible |
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