Single-channel isolated gate driver for IGBT, MOSFET, and SiC FET power switches. It provides basic or reinforced isolation with 3000 Vrms and 5000 Vrms ratings depending on package, and supports up to 17 A peak source and sink current. The device operates from a 3 V to 15 V input supply and up to a 33 V driver supply. Typical propagation delay is 65 ns, with 10 ns rise and fall times and 100 kV/µs minimum common-mode transient immunity. It uses CMOS inputs and is specified for operation from -40°C to 125°C.
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| Number of channels | 1 |
| Isolation rating | Basic, Reinforced |
| Power switch | IGBT, MOSFET, SiCFET |
| Withstand isolation voltage (VISO) | 3000, 5000Vrms |
| Working isolation voltage (VIOWM) | 990, 2121Vrms |
| Transient isolation voltage (VIOTM) | 4242, 7000Vpk |
| Peak output current | 17A |
| Peak output current (source) | 17A |
| Peak output current (sink) | 17A |
| Output VCC/VDD (min) | 13.2V |
| Output VCC/VDD (max) | 33V |
| Input supply voltage (min) | 3V |
| Input supply voltage (max) | 15V |
| Propagation delay time | 0.065µs |
| Input threshold | CMOS |
| Operating temperature range | -40 to 125°C |
| Rise time | 10ns |
| Fall time | 10ns |
| Undervoltage lockout (typ) | 12V |
| Common-mode transient immunity (min) | 100kV/µs |
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