This single-channel isolated gate driver is designed for driving IGBT, MOSFET, and SiCFET power switches. It supports basic and reinforced isolation with 3 kVrms and 5 kVrms withstand ratings, up to 17 A peak source and sink current, and 65 ns propagation delay. The device operates from a 13.2 V to 33 V output supply and a 3 V to 15 V input supply, with CMOS input thresholding. It includes active Miller clamp, emitter-referenced UVLO, split output, and a rated operating temperature range of -40°C to 125°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Texas Instruments UCC5390SCDR.B datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Number of channels | 1 |
| Isolation rating | Basic, Reinforced |
| Power switch | IGBT, MOSFET, SiCFET |
| Withstand isolation voltage (VISO) | 3000, 5000Vrms |
| Working isolation voltage (VIOWM) | 990, 2121Vrms |
| Transient isolation voltage (VIOTM) | 4242, 7000VPK |
| Peak output current | 17A |
| Output supply voltage min | 13.2V |
| Output supply voltage max | 33V |
| Input supply voltage min | 3V |
| Input supply voltage max | 15V |
| Propagation delay time | 0.065µs |
| Input threshold | CMOS |
| Operating temperature range | -40 to 125°C |
| Rise time | 10ns |
| Fall time | 10ns |
| Undervoltage lockout | 12V |
| Features | Active miller clamp, Emitter-referenced UVLO, Split output |
Download the complete datasheet for Texas Instruments UCC5390SCDR.B to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
