Seven-channel Darlington transistor array featuring 50V collector-emitter breakdown voltage and 500mA maximum collector current per channel. This NPN bipolar junction transistor array offers CMOS input capability and a 1.1V collector-emitter saturation voltage. Packaged in a 16-PDIP for through-hole mounting, it operates within a -20°C to 70°C temperature range and is RoHS compliant.
PackagePDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Texas Instruments ULN2002AN technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Height | 4.57mm |
| Lead Free | Lead Free |
| Length | 19.3mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | -20°C |
| Mount | Through Hole |
| Number of Channels | 7 |
| Number of Drivers | 7 |
| Number of Elements | 7 |
| Output Current | 500mA |
| Output Voltage | 30V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100 |
| Thickness | 3.9mm |
| Weight | 0.03357oz |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments ULN2002AN Datasheet
Download the complete datasheet for Texas Instruments ULN2002AN to view detailed technical specifications.
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