Seven-channel Darlington transistor array featuring 50V collector-emitter breakdown voltage and 500mA maximum collector current per channel. This NPN bipolar junction transistor array offers CMOS input capability and a 1.1V collector-emitter saturation voltage. Packaged in a 16-PDIP for through-hole mounting, it operates within a -20°C to 70°C temperature range and is RoHS compliant.
PackagePDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Texas Instruments ULN2002AN technical specifications.
General
Package/Case
PDIP
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
1.6V
Height
4.57mm
Lead Free
Lead Free
Length
19.3mm
Max Collector Current
500mA
Max Operating Temperature
70°C
Min Operating Temperature
-20°C
Mount
Through Hole
Number of Channels
7
Number of Drivers
7
Number of Elements
7
Output Current
500mA
Output Voltage
30V
Package Quantity
25
Packaging
Rail/Tube
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q100
Thickness
3.9mm
Weight
0.03357oz
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments ULN2002AN Datasheet
Download the complete datasheet for Texas Instruments ULN2002AN to view detailed technical specifications.
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