
The ULQ2003ATDRQ1 is a surface-mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum power dissipation of 950mW and operates within a temperature range of -40°C to 105°C. The device is lead-free and RoHS compliant, packaged in a tape and reel format with a single SOIC-8 package.
Sign in to ask questions about the Texas Instruments ULQ2003ATDRQ1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Texas Instruments ULQ2003ATDRQ1 technical specifications.
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 50V |
| Current Rating | 500mA |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 105°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 950mW |
| Mount | Surface Mount |
| Number of Drivers | 7 |
| Number of Elements | 7 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Weight | 0.004984oz |
| RoHS | Compliant |
Download the complete datasheet for Texas Instruments ULQ2003ATDRQ1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
