This reinforced isolated gate driver provides 2.5-A peak source current and 5-A peak sink current for driving IGBTs and MOSFETs. It supports a 2.25 V to 5.5 V input supply and a 15 V to 30 V output-side supply, with typical propagation delay of 76 ns. Integrated protection features include desaturation fault detection, soft turnoff, active Miller clamp, output short-circuit clamp, and input and output undervoltage lockout with RDY and FLT indicators. The device is offered in a 16-pin SOIC package and is specified for operation from -55°C to 125°C ambient.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Texas Instruments V62/16623-01XE datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 125 |
| Number of Terminals | 16 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G16 |
| Width | 7.5 |
| Length | 10.3 |
| Number of Functions | 1 |
| Temperature Grade | MILITARY |
| Supply Voltage-Nom | 5 |
| Supply Voltage-Min | 2.25 |
| Supply Voltage-Max | 5.5 |
| Interface IC Type | AND GATE BASED IGBT/MOSFET DRIVER |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Texas Instruments V62/16623-01XE to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
