The TPN3R704PL,L1Q is a high-performance N-channel enhancement mode MOSFET fabricated using Toshiba's U-MOS IX-H trench semiconductor process. It is specifically designed for high-efficiency power management applications, including DC-DC converters, switching regulators, and motor drivers. The device features ultra-low drain-source on-resistance, low gate charge, and a high operating temperature rating of 175°C, providing increased power density and improved efficiency in compact surface-mount designs.
Toshiba Semiconductor and Storage TPN3R704PL,L1Q technical specifications.
| Drain-Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 80A |
| Drain-Source On-Resistance (Rds(on)) @ Vgs=10V | 3.7mΩ |
| Gate-Source Voltage (Vgs) | ±20V |
| Total Gate Charge (Qg) | 27nC |
| Input Capacitance (Ciss) | 2500pF |
| Power Dissipation (Pd) | 86W |
| Gate-Source Threshold Voltage (Vgs(th)) | 1.4 to 2.4V |
| Operating Temperature Range | -55 to 175°C |
| RoHS | Compliant |
| REACH | Affected |
| Moisture Sensitivity Level (msl) | 1 (Unlimited) |
No datasheet is available for this part.
