Schottky rectifier diode with a 30V peak reverse repetitive voltage and 10A maximum continuous forward current. Features a 35ns peak reverse recovery time and a 0.55V peak forward voltage at 5A. Housed in a 3-pin TO-220NIS plastic package with through-hole mounting and a tab. Dual common cathode configuration.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 10FWJ2C42(N) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | Schottky Diode |
| Configuration | Dual Common Cathode |
| Peak Reverse Repetitive Voltage | 30V |
| Maximum Continuous Forward Current | 10A |
| Peak Non-Repetitive Surge Current | 100A |
| Peak Forward Voltage | 0.55@5AV |
| Peak Reverse Current | 3500uA |
| Peak Reverse Recovery Time | 35ns |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | -40 to 125°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 10FWJ2C42(N) Datasheet
Download the complete datasheet for Toshiba 10FWJ2C42(N) to view detailed technical specifications.
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