
The Toshiba 1SS200(T4DNGIK) is a dual common anode switching diode with a peak reverse repetitive voltage of 85V. It features a maximum continuous forward current of 0.1A and a maximum power dissipation of 200mW. The diode is designed for through hole mounting and has an operating temperature range of -55°C to 125°C.
Sign in to ask questions about the Toshiba 1SS200(T4DNGIK) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 1SS200(T4DNGIK) technical specifications.
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.2(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 3.2(Max) |
| Mounting | Through Hole |
| Type | Switching Diode |
| Configuration | Dual Common Anode |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | [email protected]V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 4ns |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba 1SS200(T4DNGIK) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.