The Toshiba 1SS387(TL3,T) is a single switching diode with a peak reverse repetitive voltage of 85V and a maximum continuous forward current of 0.1A. It has a maximum power dissipation of 150mW and an operating junction temperature range of -55 to 125 degrees Celsius. The diode is packaged in an ESC package with a seated plane height of 0.6mm and a package material of glass. It is designed for surface mount applications and is suitable for use in a variety of general purpose rectifier applications.
PackageESC
MountingSurface Mount
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Technical Specifications
Toshiba 1SS387(TL3,T) technical specifications.
General
| Package/Case | ESC |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 1.2 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.6 |
| Seated Plane Height (mm) | 0.6 |
| Package Material | Glass |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 1A |
| Peak Forward Voltage | 1.2V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 4ns |
| Maximum Diode Capacitance | 3pF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 1SS387(TL3,T) Datasheet
Download the complete datasheet for Toshiba 1SS387(TL3,T) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.