This silicon rectifier diode features a maximum operating temperature of 100°C and a minimum operating temperature of -40°C. It has a dual terminal position and is constructed with a single silicon diode element. The maximum reverse voltage is 15V and the maximum power dissipation is 0.15W. The diode is packaged in a R-PDSO-F2 package type.
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Technical Specifications
Toshiba 1SS389L3F(B technical specifications.
General
| Max Operating Temperature | 100 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 15 |
| Power Dissipation-Max | 0.15 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Toshiba 1SS389L3F(B Datasheet
Download the complete datasheet for Toshiba 1SS389L3F(B to view detailed technical specifications.
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