This silicon rectifier diode features a maximum operating temperature of 100°C and a minimum operating temperature of -40°C. It has a dual terminal position and is constructed with a single silicon diode element. The maximum reverse voltage is 15V and the maximum power dissipation is 0.15W. The diode is packaged in a R-PDSO-F2 package type.
Toshiba 1SS389L3F(B technical specifications.
| Max Operating Temperature | 100 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 15 |
| Power Dissipation-Max | 0.15 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
