PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 120V collector-emitter voltage and 0.1A maximum DC collector current. This single-element transistor is housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. It offers a minimum DC current gain of 350 at 2mA/6V and a typical transition frequency of 100MHz, with a maximum power dissipation of 150mW.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1163BL(5RMAT1,F technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | S-MINI |
| Package/Case | S-Mini |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.012 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 120V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 150mW |
| Material | Si |
| Minimum DC Current Gain | 350@2mA@6V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SA1163BL(5RMAT1,F Datasheet
Download the complete datasheet for Toshiba 2SA1163BL(5RMAT1,F to view detailed technical specifications.
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