PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 50V collector-emitter voltage and a 2A maximum DC collector current. This single-element transistor is housed in a compact PW-Mini surface-mount package with 4 pins (3+Tab). Offers a minimum DC current gain of 120 at 0.5A/2V and a typical transition frequency of 120 MHz. Operating temperature range is -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1213Y(T12LMBSH1 technical specifications.
General
Package/Case
PW-Mini
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.5
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Package Weight (g)
0.05
Mounting
Surface Mount
Type
PNP
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
2A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
120(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SA1213Y(T12LMBSH1 Datasheet
Download the complete datasheet for Toshiba 2SA1213Y(T12LMBSH1 to view detailed technical specifications.
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