The 2SA1358(LBYAZK) is a single PNP bipolar power transistor from Toshiba. It has a maximum collector-base voltage of 120V and a maximum DC collector current of 1A. The transistor is made from silicon material and has a maximum power dissipation of 10W. It operates within a temperature range of -55°C to 150°C.
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| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 120V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 10000mW |
| Material | Si |
| Maximum Transition Frequency | 120(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SA1358(LBYAZK) to view detailed technical specifications.
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