The Toshiba 2SA1681(T2LDNSO) is a surface mount PNP bipolar junction transistor with a maximum collector-base voltage of 60V and a maximum collector-emitter voltage of 50V. It has a maximum DC collector current of 2A and a maximum power dissipation of 1000mW. The transistor is packaged in a PW-Mini package with a seated plane height of 1.6mm and a weight of 0.05g. It operates within a maximum temperature of 150°C and has a minimum DC current gain of 40 at 1.5A and 2V, or 120 at 100mA and 2V. The transistor is suitable for use in a variety of applications, including power amplification and switching circuits.
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Toshiba 2SA1681(T2LDNSO) technical specifications.
| Package/Case | PW-Mini |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Package Weight (g) | 0.05 |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V|120@100mA@2V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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