PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 1A maximum DC collector current. This single element transistor is housed in a 4-pin PW-Mini package with a tab, offering a maximum power dissipation of 1000mW. Operating temperature range is -55°C to 150°C, with a typical transition frequency of 100MHz.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1735(F) technical specifications.
General
| Package/Case | PW-Mini |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Package Weight (g) | 0.05 |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 120@100mA@2V|40@700mA@2V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SA1735(F) Datasheet
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