The 2SA1930(Q,M) is a PNP bipolar junction transistor from Toshiba, featuring a TO-220-3 package and a maximum collector current of 2A. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The transistor has a maximum breakdown voltage of 180V and a maximum power dissipation of 2W.
Frequency200MHz
PackageTO-220-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Toshiba 2SA1930(Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 180V |
| Collector Emitter Voltage (VCEO) | 180V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Copper, Tin, Silver |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 180V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 20W |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SA1930(Q,M) Datasheet
Download the complete datasheet for Toshiba 2SA1930(Q,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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