PNP Bipolar Junction Transistor (BJT) in a TO-3PN package. Features 80V collector-emitter voltage, 6A continuous collector current, and 60W power dissipation. This single-element silicon transistor offers a minimum DC current gain of 80 at 1A/5V and a typical transition frequency of 30MHz. Designed for through-hole mounting, it has 3 pins and a tab within a plastic TO-3PN package.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1939-O(FUNAI1) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 20 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 6A |
| Maximum Power Dissipation | 60000mW |
| Material | Si |
| Minimum DC Current Gain | 80@1A@5V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SA1939-O(FUNAI1) Datasheet
Download the complete datasheet for Toshiba 2SA1939-O(FUNAI1) to view detailed technical specifications.
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