PNP Bipolar Junction Transistor (BJT) in a TO-3PN package, designed for through-hole mounting. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 6A, with a power dissipation capability of 60000mW. This single-element silicon transistor offers a minimum DC current gain of 80 at 1A and 5V, and a typical transition frequency of 30MHz. The TO-3PN package measures 15.5mm in length, 4.5mm in width, and 20mm in height.
PackageTO-3PN
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SA1939-O(MARNT1) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 20 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 6A |
| Maximum Power Dissipation | 60000mW |
| Material | Si |
| Minimum DC Current Gain | 80@1A@5V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SA1939-O(MARNT1) Datasheet
Download the complete datasheet for Toshiba 2SA1939-O(MARNT1) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.