PNP Bipolar Junction Transistor (BJT) in a TO-3PN package, designed for through-hole mounting. Features include a maximum collector-emitter voltage of 80V, maximum collector current of 6A, and a power dissipation of 60000mW. This single-element silicon transistor offers a minimum DC current gain of 80 at 1A and 5V, with a typical transition frequency of 30MHz. The TO-3PN package measures 15.5mm in length, 4.5mm in width, and 20mm in height.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SA1939-O(ONK) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 20 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 6A |
| Maximum Power Dissipation | 60000mW |
| Material | Si |
| Minimum DC Current Gain | 80@1A@5V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SA1939-O(ONK) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
