The 2SA1941-O(QT) is a PNP transistor with a collector base voltage of 140V and collector emitter breakdown voltage of 160V. It can handle a maximum collector current of 1A and has a maximum power dissipation of 900mW. The transistor is packaged in a TO-226-3 case and is designed for through hole mounting. It operates over a temperature range of -55°C to 150°C and is lead free.
PackageTO-226-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Toshiba 2SA1941-O(QT) technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector-emitter Voltage-Max | 1.5V |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SA1941-O(QT) Datasheet
Download the complete datasheet for Toshiba 2SA1941-O(QT) to view detailed technical specifications.
No datasheet is available for this part.