The 2SA1943O is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 230V and a maximum collector current of 15A. It can handle a maximum power dissipation of 150W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a through-hole configuration and is available in bulk packaging with 100 units per package.
Frequency30MHz
Current Rating-15A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Toshiba 2SA1943O technical specifications.
General
| Collector Base Voltage (VCBO) | 230V |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Emitter Voltage (VCEO) | 230V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Lead Free | Contains Lead |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Transition Frequency | 30MHz |
| DC Rated Voltage | -230V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SA1943O Datasheet
Download the complete datasheet for Toshiba 2SA1943O to view detailed technical specifications.
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